A Device Model for Rb-Conditioned Chalcopyrite Solar Cells

We present a comprehensive device model for Cu(In,Ga)Se2 (CIGSe) thin-film solar cells based on numerical SCAPS-1D simulations. The reproduces the experimentally determined current-voltage and capacitance-voltage characteristics of Rb-free reference device, sample that underwent an RbF-treatment, CIGSe/RbInSe2-stack. According to this model, in agreement with experimental findings, main consequences both Rb-conditionings are increased doping-density defect passivation CIGSe as well formation photocurrent barrier at hetero interface. With established, fundamental aspects Rb-conditioning, e.g., differentiation between its effect bulk interface recombination discussed. Additionally, temperature dependent analysis is employed order test model's predictions regarding interaction Rb injection-current back contact device. Both simulation measurements lead result RbF-PDT increasing height barrier, while deposition RbInSe2 decreasing it.